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AP60N03GS/P
Pb Free Plating Product
Advanced Power Electronics Corp.
Low On-Resistance Fast Switching Simple Drive Requirement G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 13.5m 55A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60N03GP) is available for low-profile applications. GD S
TO-263(S)
G D
TO-220(P)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 30 20 55 35 215 62.5 0.5 -55 to 150 -55 to 150
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Units /W /W
Data & specifications subject to change without notice
201221041
AP60N03GS/P
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.037 11.5 18 30 22.4 2.7 14 7.4 81 24 18 950 440 145
Max. Units 13.5 20 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=28A VGS=4.5V, ID=22A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=28A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=28A VDS=24V VGS=5V VDS=15V ID=28A RG=3.3,VGS=10V RD=0.53 VGS=0V VDS=25V f=1.0MHz
Gate-Source Forward Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V
1
Min. -
Typ. -
Max. Units 55 215 1.3 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25, IS=55A, VGS=0V
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
AP60N03GS/P
200 150
T C =25 C ID , Drain Current (A)
150
o
10V 8.0V ID , Drain Current (A)
100
T C =150 o C
10V 8.0V
6.0V
100
6.0V
50
50
V G =4.0V
V G =4.0V
0
0
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
18
I D = 28 A T C =25 o C Normalized R DS(ON)
1.4
I D =28A V G =10V
RDS(ON) (m )
16
1.2
14
1
12
0.8
10
2 4 6 8 10
0.6 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
100
3
10 2
1
VGS(th) (V)
1 0 -50
T j =150 C IS (A)
o
T j =25 C
o
0.1
0.01 0 0.2 0.4 0.6 0.8 1 1.2
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP60N03GS/P
14
f=1.0MHz
10000
I D = 28 A
12
VGS , Gate to Source Voltage (V)
10
8
V DS =16V V DS =20V V DS =24V
C (pF)
1000
C iss C oss
6
4
2
C rss
0 0 5 10 15 20 25 30 35 40 100
1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
0.2
10us ID (A) 100us 1ms T c =25 C Single Pulse
o
0.1
0.1
0.05
0.02
10
PDM
0.01
t
Single Pulse
10ms 100ms
T
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
1 1 10 100
0.01
0.00001 0.0001 0.001 0.01 0.1 1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform

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